Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 3.3A, RDS(ON) = 100mΩ @VGS = 10V. RDS(ON) = 200mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

文件：501.75 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

13A 2G DP Switched Socket with Dual USB AC 20V DC 2.25A

DESCRIPTION 13A 2G DP Switched Socket with Dual USB A+C 20V DC 2.25A (Max. 45W) - Antique Brass ADDITIONAL FEATURES USB-C ONLY: 5V DC 3A (15W) / 9V DC 3A (27W) / 15V DC 3A (45W) / 20V DC 2.25A (45W) USB-A ONLY: 5V DC 3A (15W) / 9V DC 2A (18W) / 12V DC 1.5A (18W) BOTH PORTS IN USE: USB-C: 5V

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KNIGHTSBRIDGE

60V N-Channel PowerTrench MOSFET

General Description These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

文件：73.01 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

Dual N-Channel 60-V (D-S) MOSFET

GENERAL FEATURES * Vos=60V,1o=6A * Roson

文件：3.56193 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子