Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 3.7A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：502.16 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 UIS Tested • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Set Top Box • Low Current DC/DC

文件：1.027069 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 48 Ampere FEATURE * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Small package. (TO-252A) APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CONSTRUCTION * N-Ch

文件：201.16 Kbytes 页数：2 Pages

CHENMKO

力勤

Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：107.92 Kbytes 页数：7 Pages

IRF

30V 2N-Channel MOSFET

Features Generation V Technology Ultra Low On-Resistance Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free VDS (V) =30V ID = 2.2A (VGS = -10V) RDS(ON)

文件：475.86 Kbytes 页数：7 Pages

UMW

友台半导体