Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 5A, RDS(ON) = 465mΩ @VGS = 4.5V. RDS(ON) = 60mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

文件：502 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

DMOS DUAL FULL BRIDGE DRIVER

DESCRIPTION The L9925 is a dual full bridge driver for stepper motor applications. Realized in BCD (Bipolar, CMOS & DOS) techology, logic circuits, precise linear blocks and power transistors are combined to optimize circuit performance and minimize off chip components. Schmitt triggers are u

文件：81.54 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-channel enhancement mode field-effect transistor

Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor control ■ Lithium-ion battery applications ■ N

文件：272.81 Kbytes 页数：13 Pages

PHI

PHI

N-channel enhancement mode field-effect transistor

Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor control ■ Lithium-ion battery applications ■ N

文件：272.81 Kbytes 页数：13 Pages

PHI

PHI