Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 30V, 7A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. ■ -30V, -3.5A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 160mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability.

文件：134.93 Kbytes 页数：7 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

CET

华瑞

Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 30 Volts CURRENT 7 Ampere P-channel: VOLTAGE 30 Volts CURRENT 3.5 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Servo moto

文件：320.23 Kbytes 页数：3 Pages

CHENMKO

力勤

SPI Programmable-Gain Amplifier with Input VOS Trim and Output Op Amp

文件：368.12 Kbytes 页数：15 Pages

Maxim

美信

SPI Programmable-Gain Amplifier with Input VOS Trim and Output Op Amp

文件：304.55 Kbytes 页数：15 Pages

Maxim

美信