Dual N-Channel Enhancement Mode Field Effect Transistor

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Dual N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 5.4 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

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Dual N-Channel MOSFET uses advanced trench technology

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