Dual Enhancement Mode Field Effect Transistor(N and P Channel)

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Dual Enhancement Mode Field Effect Transistor(N and P Channel)

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 30V, 7A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. ■ -30V, -3.5A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 160mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability.

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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