P-Channel Enhancement Mode Field Effect Transistor

FEATURES ● -30V, -3.4A, RDS(ON) = 130mΩ @VGS = -10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：491.11 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

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7.5mm pitch pluggable rising clamp terminal blocks

Product ove r v i ew • 2-12 pole solid block • Professional rising clamp terminals • Moulded in green UL94-V0 flame retardant PA66 • Cable acceptance - 0.32 to 1.6mm2 (28-14AWG) solid and stranded cable • Pluggable male and female connectors • Open and closed headers • Horizontal female pl

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