P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -5.3A, RDS(ON) = 50mΩ @VGS = -10V. ​​​​​​​ RDS(ON) = 90mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：499.65 Kbytes 页数：5 Pages

CET

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P-Channel Enhancement Mode Field Effect Transistor

文件：373.22 Kbytes 页数：4 Pages

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P Channel MOSFET

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华瑞

P-Channel Enhancement Mode MOSFET

文件：503.35 Kbytes 页数：5 Pages

CET

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -5.3A, RDS(ON) = 60mW @VGS = -10V. RDS(ON) = 120mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-223 package. Lead-free plating ; RoHS compliant.

文件：501.99 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

文件：325.34 Kbytes 页数：3 Pages

CHENMKO

力勤