P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -5.3A, RDS(ON) = 50mΩ @VGS = -10V. ​​​​​​​ RDS(ON) = 90mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：499.65 Kbytes 页数：5 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

文件：373.22 Kbytes 页数：4 Pages

CET

华瑞

P Channel MOSFET

CET

华瑞

Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features · –5.3 A, –30 V RDS(ON) = 50

文件：66.22 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

Bipolar Power Transistors

Bipolar Power Transistors PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Sat

文件：94.72 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –5.3 A, –30 V RDS(ON) = 50 mΩ @ VGS

文件：219.85 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体