Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features · –5.3 A, –30 V RDS(ON) = 50

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Fairchild

仙童半导体

P-Channel 30-V (D-S) MOSFET

文件：961.34 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P 沟道，PowerTrench® MOSFET，30V，-5.3A，50mΩ

此P沟道MOSFET是采用飞兆半导体先进的PowerTrench工艺生产的稳固栅极版本。 它已针对需要大范围栅极驱动电压额定值(4.5V – 25V)的电源管理应用进行了优化。 •-5.3 A, -30 V\n•RDS(ON) = 50 mΩ @ VGS = -10 V\n•RDS(ON) = 80 mΩ @ VGS = - 4.5 V。\n•低栅极电荷\n•快速开关速度\n•采用高密度单元设计，可实现极低的RDS(ON)。\n•高功率和高电流处理能力;

ONSEMI

安森美半导体

P-Channel 30-V (D-S) MOSFET

文件：961.33 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

Plastic-Encapsulate MOSFETS

DESCRIPTION The FQ9435Q uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. APPLICATIONS Battery S

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GWSEMI

唯圣电子

High Power and current handing capability

文件：335.86 Kbytes 页数：6 Pages

FS