FQ9435Q

Plastic-Encapsulate MOSFETS

DESCRIPTION TheFQ9435Qusesadvancedtrenchtechnologytoprovide excellentRDS(ON),shoot-throughimmunity,bodydiode characteristicsandultra-lowgateresistance.Thisdeviceis ideallysuitedforuseasalowsideswitchinNotebookCPU corepowerconversion. APPLICATIONS BatteryS

FTK9435

HighPowerandcurrenthandingcapability

G9435S

PWMapplications

DESCRIPTION TheG9435Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. Application ●PWMapplications ●Loadswitch ●Powermanagement

GAPM9435

MinisizeofDiscretesemiconductorelements

GI9435

P-CHANNELENHANCEMENTMODEPOWERMOSFET

GJ9435

P-CHANNELENHANCEMENTMODEPOWERMOSFET

GL9435

P-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGL9435providethedesignerwiththebestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. Features *SimpleDriveRequirement *LowerOn-resistance *FastSwitching

GSC9435

P-CHANNELENHANCEMENTMODEPOWERMOSFET

GSC9435M

P-CHANNELENHANCEMENTMODEPOWERMOSFET

H9435S

P-ChannelEnhancement-ModeMOSFET(-30V,-5.3A)

Features •RDS(on)=60mΩ@VGS=-10V,ID=-5.3A •RDS(on)=90mΩ@VGS=-4.5V,ID=-4.2A •AdvancedTrenchProcessTechnology •HighDensityCellDesignforUltraLowOn-Resistance •FullyCharacterizedAvalancheVoltageandCurrent •ImprovedShoot-ThroughFOM