丝印：9435；Package：SOP-8；PWM applications

DESCRIPTION The G9435S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. Application ●PWM applications ●Load switch ●Power management

文件：1.93672 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

-30V P Channel TRENCH MOSFET

GOFORD

谷峰半导体

Bipolar Power Transistors

Bipolar Power Transistors PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Sat

文件：94.72 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –5.3 A, –30 V RDS(ON) = 50 mΩ @ VGS

文件：219.85 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

P-Channel Logic Level PowerTrench MOSFET

文件：101.08 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体