P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -5.3A, RDS(ON) = 50mΩ @VGS = -10V. ​​​​​​​ RDS(ON) = 90mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：496.2 Kbytes 页数：5 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -5A, RDS(ON) = 60mW @VGS = -10V. RDS(ON) = 95mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant.

文件：815.02 Kbytes 页数：4 Pages

CET-MOS

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P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -5.3A, RDS(ON) = 50mΩ @VGS = -10V. ​​​​​​​ RDS(ON) = 90mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：499.65 Kbytes 页数：5 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

文件：373.22 Kbytes 页数：4 Pages

CET

华瑞

P Channel MOSFET

CET

华瑞