Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 20V , 6A , RDS(ON)=20mΩ @VGS=4.5V. RDS(ON)=30mΩ @VGS=2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

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CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

BIPOLAR LINEAR INTEGRATED CIRCUIT (LOW FREQUENCY POWER AMPLIFIER)

LOW FREQUENCY POWER AMPLIFIER

文件：205.58 Kbytes 页数：8 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Gallium Arsenide CATV Amplifier Module

The RF Line Gallium Arsenide CATV Amplifier Module Description • 24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Power Doubler Amplifier Module Features • Specified for 79- and 112-Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built-in Input Diode Protecti

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MOTOROLA

摩托罗拉

ATM Interconnect

Description The CelXpres T8207 device integrates all of the required functionality to transport ATM cells across a backplane architecture with high-speed cell traffic exceeding 1.5 Gbits/s to a maximum of 32 destinations. The management of multiple service categories and monitoring of performance

文件：4.70003 Mbytes 页数：158 Pages

AGERE