P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -7.9A, RDS(ON) = 24mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package

文件：501.02 Kbytes 页数：5 Pages

CET

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

文件：186.35 Kbytes 页数：2 Pages

CHENMKO

力勤

P-Channel 30-V (D-S) MOSFET

文件：1.00469 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

80 Amp Rectifier 20 to 45 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：664.94 Kbytes 页数：3 Pages

MCC