P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -7A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

文件：499.64 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -7.9A, RDS(ON) = 24mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package

文件：501.02 Kbytes 页数：5 Pages

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P Channel MOSFET

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