P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -5.2A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 95mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

文件：502.57 Kbytes 页数：5 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 5 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching

文件：186.06 Kbytes 页数：2 Pages

CHENMKO

力勤

Metallized Polypropylene Film Capacitor

文件：98.97 Kbytes 页数：7 Pages

PANASONIC

松下

Single P-Channel 2.5V Specified MOSFET

General Description This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance. Featu

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FAIRCHILD

仙童半导体