N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 2.6A, RDS(ON) = 230mΩ @VGS = 10V. RDS(ON) = 270mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

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N-Channel Enhancement Mode Field Effect Transistor

CET

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