Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 4A, RDS(ON) = 76mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：647.27 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 4A, RDS(ON) = 76mW @VGS = 10V. RDS(ON) = 100mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：519.51 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel 60 V (D-S) MOSFET

FEATURES • 100 Rg and UIS Tested • DT-Trench Power MOSFET APPLICATIONS • Notebook PC Core • VRM/POL

文件：513.179 Kbytes 页数：7 Pages

DINTEK

8/6-Slot Desktop/Wallmount Chassis with PS/2 and Redundant Power Supply Options

文件：1.38833 Mbytes 页数：2 Pages

ADVANTECH

研华科技

lHEXFET Power MOSFET

Description The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

文件：178.74 Kbytes 页数：8 Pages

IRF