Socket 478 Intel Pentium M COM Express Type 2 Module with Intel 915GME/910GMLE ICH6M Chipset

文件：341.61 Kbytes 页数：1 Pages

AXIOMTEK

艾讯科技

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V , 6A , RDS(ON)=20mΩ @VGS=4.5V. RDS(ON)=30mΩ @VGS=2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

文件：61.54 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 20V , 6A , RDS(ON)=20mΩ @VGS=4.5V. RDS(ON)=30mΩ @VGS=2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：56.45 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 7A, RDS(ON) = 22mW @VGS = 4.5V. RDS(ON) = 32mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. ESD Protected: 2000 V

文件：609.52 Kbytes 页数：4 Pages

CET-MOS

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 7A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired. ■ ESD Protected: 2000 V

文件：396.85 Kbytes 页数：4 Pages

CET

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双N沟道增强型场效应晶体管

文件：63.668 Kbytes 页数：5 Pages

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PDF上传者：深圳市金亿隆电子科技有限公司

Dual N-Channel MOSFET uses advanced trench technology

文件：1.92486 Mbytes 页数：5 Pages

DOINGTER

杜因特

Socket 478 Intel Pentium M COM Express Type 2 Module with Intel 915GME/910GMLE ICH6M Chipset

文件：341.61 Kbytes 页数：1 Pages

AXIOMTEK

艾讯科技

Socket 478 Intel Pentium M COM Express Type 2 Module with Intel 915GME/910GMLE ICH6M Chipset

文件：341.61 Kbytes 页数：1 Pages

AXIOMTEK

艾讯科技

Dual N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞