Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 100V, 2.6A, RDS(ON) = 190mΩ @VGS = 10V. ■ -100V, -2.0A, RDS(ON) = 320mΩ @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：183.32 Kbytes 页数：7 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. 100V, 2.6A, RDS(ON) = 190mW @VGS = 10V. -100V, -2.0A, RDS(ON) = 320mW @VGS = -10V. Lead free product is acquired.

文件：807.98 Kbytes 页数：7 Pages

CET-MOS

华瑞

N+P Power MOSFET

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华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. 100V, 2.6A, RDS(ON) = 190mW @VGS = 5V. -100V, -2.0A, RDS(ON) = 320mW @VGS = -10V. RDS(ON) = 180mW @VGS = 10V. Lead-free plating ; RoHS compliant.

文件：808.43 Kbytes 页数：7 Pages

CET-MOS

华瑞

Dual Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 2.6A, RDS(ON) = 190mΩ @VGS = 5V. RDS(ON) = 180mΩ @VGS = 10V. ■ -100V, -2.0A, RDS(ON) = 320mW @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead-free plati

文件：620.61 Kbytes 页数：7 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

文件：547.25 Kbytes 页数：7 Pages

CET

华瑞

N-Channel and P-Channel MOSFET use advanced trench Technology

文件：2.66647 Mbytes 页数：7 Pages

DOINGTER

杜因特

Dual N & P MOSFET

CET

华瑞