Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. 100V, 2.6A, RDS(ON) = 190mW @VGS = 5V. -100V, -2.0A, RDS(ON) = 320mW @VGS = -10V. RDS(ON) = 180mW @VGS = 10V. Lead-free plating ; RoHS compliant.

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CET-MOS

华瑞

Dual Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 2.6A, RDS(ON) = 190mΩ @VGS = 5V. RDS(ON) = 180mΩ @VGS = 10V. ■ -100V, -2.0A, RDS(ON) = 320mW @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead-free plati

文件：620.61 Kbytes 页数：7 Pages

CET

华瑞

N-Channel and P-Channel MOSFET use advanced trench Technology

文件：2.66647 Mbytes 页数：7 Pages

DOINGTER

杜因特

The Littelfuse CG7 series GDT is a miniature surface mount device with a 1kA 8/20關S surge rating

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Littelfuse

力特

73 Series - IP68 Waterproof Enclosure

Product Ove r v i ew • IP68 high performance plastic enclosure protected from immersion as long as 24 hours at 1m depth • ASA material is resistant to deterioration and discolouration from ultraviolet rays. Perfect for use as outdoor communication and network devices • With a silicone waterpr

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CAMDENBOSS

Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 100 Volts CURRENT 2.6 Ampere P-channel: VOLTAGE 100 Volts CURRENT 2.0 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Servo

文件：358.05 Kbytes 页数：3 Pages

CHENMKO

力勤