N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 4A, RDS(ON) = 76mW @VGS = 10V. RDS(ON) = 100mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：656.62 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 4A, RDS(ON) = 76mW @VGS = 10V. RDS(ON) = 100mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：600.8 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

The Littelfuse CG6 series GDT is a miniature surface-mount device with a 3kA 8/20 surge rating

文件：706.26 Kbytes 页数：4 Pages

Littelfuse

力特

Voltage-Controlled Oscillator Surface Mount Module

文件：98.28 Kbytes 页数：2 Pages

ZCOMM

Voltage-Controlled Oscillator Surface Mount Module

文件：94.57 Kbytes 页数：2 Pages

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