Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -4.9A, RDS(ON) = 53mΩ @VGS = -10V. -3.6A, RDS(ON) = 95mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package

文件：499.89 Kbytes 页数：5 Pages

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Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

文件：1.05753 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P Channel MOSFET

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Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -4.5A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ Surface mount Package

文件：111.2 Kbytes 页数：4 Pages

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Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -4.5A, RDS(ON) = 64mΩ @VGS = -10V. RDS(ON) = 95mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead-free plating ; RoHS compliant.

文件：430.04 Kbytes 页数：4 Pages

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Dual P-Channel Enhancement Mode Field Effect Transistor

文件：372.22 Kbytes 页数：4 Pages

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Dual P-Channel Enhancement Mode Field Effect Transistor

文件：337.66 Kbytes 页数：4 Pages

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P Channel MOSFET

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P Channel MOSFET

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