Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -4.5A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ Surface mount Package

文件：111.2 Kbytes 页数：4 Pages

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Dual P-Channel Enhancement Mode Field Effect Transistor

文件：337.66 Kbytes 页数：4 Pages

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P Channel MOSFET

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Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -4.5A, RDS(ON) = 64mΩ @VGS = -10V. RDS(ON) = 95mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead-free plating ; RoHS compliant.

文件：430.04 Kbytes 页数：4 Pages

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Dual P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 4.9 Ampere FEATURE * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. * Small flat package. (SO-8 ) APPLICATION * Servo motor control. * Power MOSFET gate drive

文件：205.17 Kbytes 页数：2 Pages

CHENMKO

力勤

P-Channel 30-V(D-S) MOSFET

文件：2.37012 Mbytes 页数：5 Pages

JIANGSU

长电科技