Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 4.1A, RDS(ON) = 68mΩ @VGS = 10V. RDS(ON) = 86mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：413.2 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 4.1A, RDS(ON) = 68mW @VGS = 10V. RDS(ON) = 86mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：601.42 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

Dual N-ChannelEnhancement Mode Power MOSFET

GENERAL FEATURES * Vos=B0VIo=6A + Rosin

文件：2.12733 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子