CEM6607

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-3.8A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM6607

Dual P-Channel Enhancement Mode Field Effect Transistor

CHM6607JPT

DualP-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT3.8Ampere FEATURE ​​​​​​​*Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Other

EM6607

Ultra-lowpowermicrocontrollerwith4highdriveoutputs

FP6607

RFAMPLIFIERMODEL

IRF6607

PowerMOSFET

Description TheIRF6607combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge

MAX6607

Low-VoltageAnalogTemperatureSensorsinSC70andSOT23Packages

MAX6607IXK-T

Low-VoltageAnalogTemperatureSensorsinSC70andSOT23Packages

MCH6607

Ultrahigh-SpeedSwitchingApplications

P-ChannelSiliconMOSFET Features •LowON-resistance. •Ultrahigh-speedswitching. •2.5Vdrive. •Compositetypewith2MOSFETscontainedinasingle package,facilitainghigh-densitymounting.

NAS6607

BOLT,HEXHEAD,CLOSETOLERANCE,ALLOYSTEELSHORTTHREAD