Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -3.8A, RDS(ON) = 86mW @VGS = -10V. RDS(ON) = 125mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：653.42 Kbytes 页数：4 Pages

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Dual P-Channel Enhancement Mode Field Effect Transistor

文件：345.69 Kbytes 页数：4 Pages

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P Channel MOSFET

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Dual P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 3.8 Ampere FEATURE ​​​​​​​* Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other

文件：232.81 Kbytes 页数：2 Pages

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