P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：439.89 Kbytes 页数：4 Pages

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Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

文件：1.05763 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -6.2A, RDS(ON) = 33mW @VGS = -10V. RDS(ON) = 52mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：664.2 Kbytes 页数：4 Pages

CET-MOS

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P Channel MOSFET

CET

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P-Channel Enhancement Mode Field Effect Transistor

文件：461.48 Kbytes 页数：4 Pages

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