Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. ■ -30V, -5.9A, RDS(ON) = 36mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabili

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V, 7.6A, RDS(ON) = 22mW @VGS = 10V. FEATURES RDS(ON) = 33mW @VGS = 4.5V. -30V, -5.9A, RDS(ON) = 36mW @VGS = -10V. RDS(ON) = 52mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is ac

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N+P Power MOSFET

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

文件：616.52 Kbytes 页数：7 Pages

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