P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -4.2A, RDS(ON) = 66mΩ @VGS = -10V. RDS(ON) = 105mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：419.65 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

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