Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

FEATURES ■ 30V , 4.7A , RDS(ON)=55mΩ @VGS=10V. RDS(ON)=85mΩ @VGS=4.5V. ■ -30V , -4.5A , RDS(ON)=80mΩ @VGS=-10V. RDS(ON)=135mΩ @VGS=-4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

文件：84.48 Kbytes 页数：8 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

CET

华瑞

Dual Enhancement Mode Field Effect Transistor

文件：319.86 Kbytes 页数：3 Pages

CHENMKO

力勤

Mini size of Discrete semiconductor elements

文件：468.13 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

CONTROL DEVICES High Voltage NIP Diodes TM

文件：171.25 Kbytes 页数：4 Pages

Microsemi

美高森美