Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -3.1A, RDS(ON) = 120mW @VGS = -10V. RDS(ON) = 150mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：894.71 Kbytes 页数：4 Pages

CET-MOS

华瑞

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -3.1A, RDS(ON) = 120mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：109.43 Kbytes 页数：4 Pages

CET

华瑞

P-Channel MOSFET uses advanced trench technology

文件：1.38598 Mbytes 页数：4 Pages

DOINGTER

杜因特

Dual P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 3.1 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switchi

文件：204.56 Kbytes 页数：2 Pages

CHENMKO

力勤

Dual P-Channel 60-V (D-S) MOSFET Halogen-free

文件：1.44285 Mbytes 页数：8 Pages

DINTEK

1.0 AMP. FAST RECOVERY RECTIFIERS

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文件：135.55 Kbytes 页数：2 Pages

JGD

固锝电子