CEM3120

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,10A,RDS(ON)=15mΩ@VGS=10V. RDS(ON)=22mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM3120

N-Channel MOSFET uses advanced trench technology

CEM3120_10

N-Channel Enhancement Mode Field Effect Transistor

CEP3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●30V,40A,RDS(ON)=15mΩ@VGS=10V. RDS(ON)=22mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ●TO-220&TO-263package.

CEU3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,36A,RDS(ON)=15mΩ@VGS=10V. RDS(ON)=22mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU3120

N-ChannelEnhancementModeFieldEffectTransistor

CEU3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,36A,RDS(ON)=15mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=22mW@VGS=4.5V. Leadfreeproductisacquired.

CHM3120JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT10Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchin

CHM3120PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT36Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CLM3120

PHOTOMODSNEONMODULES