P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. ■ -30V, -4.9A, RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing ca

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CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -6.2A, RDS(ON) = 33mW @VGS = -10V. RDS(ON) = 52mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. -30V, -4.9A, RDS(ON) = 52mW @VGS = -10V. RDS(ON) = 85mW @VGS = -4.5V.

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CET-MOS

华瑞

P-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

P Channel MOSFET

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华瑞