CEM3317

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-6.2A,RDS(ON)=33mW@VGS=-10V. RDS(ON)=52mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. -30V,-4.9A,RDS(ON)=52mW@VGS=-10V. RDS(ON)=85mW@VGS=-4.5V.

CEM3317

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-6.2A,RDS(ON)=33mΩ@VGS=-10V. RDS(ON)=52mΩ@VGS=-4.5V. ■-30V,-4.9A,RDS(ON)=52mΩ@VGS=-10V. RDS(ON)=85mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingca

CEM3317

P-Channel MOSFET uses advanced trench technology

CGS3317M

CMOSCrystalClockGenerators

GeneralDescription TheCGS3311,CGS3312,CGS3313,CGS3314,CGS3315,CGS3316,CGS3317,CGS3318andCGS3319devicesaredesignedforClockGenerationandSupport(CGS)applicationsupto110MHz.TheCGS331xseriesofdevicesarecrystalcontrolledCMOSoscillatorsrequiringaminimumofexternal

CPH3317

Ultrahigh-SpeedSwitchingApplications

Features •LowON-resistance. •Ultrahigh-speedswitching. •2.5Vdrive.

EPA3317

ISDNS-InterfaceTransformer

ISDNS-InterfaceTransformer •2000VrmsMinimumIsolation• •ThroughHolePackage•

FUSB3317

AutomotiveUSBPowerDeliverySourceControllerforUSB-C

FUSB3317isahighlyintegratedUSBPowerDelivery(PD)power SourcecontrollerforUSB−CthatimplementsallfunctionalityofUSB PowerDelivery3.1(PD)andType−C2.0includingProgrammable PowerSupplies(PPS).TheFUSB3317directlyinterfaceswitha DC−DCregulatorsavingthecostofal

HLMP-3317

T-13/4(5mm)HighIntensityLEDLamps

Description ThisfamilyofT-13/4nondiffusedLEDlampsisspeciallydesignedforapplicationsrequiringhigher on-axisintensitythanisachievablewithastandardlamp.Thelightgeneratedisfocusedtoanarrowbeamtoachievethiseffect. Features •HighIntensity •Choiceof

M3317

Heyco짰-TiteLiquidTightCordgrips

M3317

TiteLiquidTightCordgrips