CEM3128

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,9A,RDS(ON)=16mΩ@VGS=10V. RDS(ON)=23mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM3128

Dual N-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFETPowerMOSFET •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •NotebookSystemPower •LowCurrentDC/DC

CHM3128JPT

DualN-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT9Ampere FEATURE *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. *Smallflatpackage.(SO-8) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CL3128A

LaserProcessedLogicDeviceFamily

-LaserProcessedLogicDevice(LPLD™)technologyoffers theultimatecombinationofperformance,flexibility,and lowcost -Functionally,architecturally,andelectricallycompatible withindustry-standardAltera®MAX®3000 -HighDensity 5,000Usablegates 256Macrocells 158Maximum

CY3128

WarpProfessionalCPLDSoftware

DL-3128

1310nmDFBLASERDIODES

DL-3128

1310nmDFBLASERDIODESMQW-DFBLASERDIODES

DL-3128

1310nmDFBLASERDIODES2.5Gb/sMQW-DFBLASERDIODES

DL-3128S

1310nmDFBLASERDIODES

DL-3128S

1310nmDFBLASERDIODESMQW-DFBLASERDIODES