Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 9A, RDS(ON) = 16mΩ @VGS = 10V. RDS(ON) = 23mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：251.52 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFETPower MOSFET • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • Low Current DC/DC

文件：1.05355 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N Channel MOSFET

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 9 Ampere FEATURE * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. * Small flat package. (SO-8 ) APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：508.73 Kbytes 页数：3 Pages

CHENMKO

力勤

Laser Processed Logic Device Family

- Laser Processed Logic Device (LPLD™) technology offers the ultimate combination of performance, flexibility, and low cost - Functionally, architecturally, and electrically compatible with industry-standard Altera® MAX® 3000 - High Density 5,000 Usable gates 256 Macrocells 158 Maximum

文件：166.66 Kbytes 页数：14 Pages

etc2List of Unclassifed Manufacturers

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Warp Professional CPLD Software

文件：118.91 Kbytes 页数：8 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司