N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 6.6A, RDS(ON) = 36mΩ @VGS = 10V. RDS(ON) = 48mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ Surface mount Package.

文件：742.53 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 40 Volts CURRENT 6.6 Ampere FEATURE * Small flat package. (SO-8 ) * Super High density cell design for extremely low RDS(ON). * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：260.459 Kbytes 页数：2 Pages

CHENMKO

力勤

SCREW MACHINE SOCKETS & TERMINAL STRIPS

文件：209.7 Kbytes 页数：2 Pages

ADAM-TECH

亚当科技

SCREW MACHINE SOCKETS & TERMINAL STRIPS

文件：209.7 Kbytes 页数：2 Pages

ADAM-TECH

亚当科技