N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 9A, RDS(ON) = 18mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

文件：517.53 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 9 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching

文件：319.97 Kbytes 页数：3 Pages

CHENMKO

力勤

SILICON N-CHANNEL JFET

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPF4416A type is an epoxy molded N-Channel Silicon Junction Field Effect Transistor manufactured in an SOT-23 case, designed for VHF amplifier and mixer applications.

文件：77.31 Kbytes 页数：2 Pages

Central

SLIDE SWITCHES (SMD)

文件：1.22567 Mbytes 页数：12 Pages

COPAL

尼得科