N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 8.9A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：104.84 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：391.15 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 36A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：102.08 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 36A, RDS(ON) = 20mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 32mW @VGS = 4.5V. Lead free product is acquired.

文件：662.37 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 8.9 Ampere FEATURE * Small flat package. (SO-8 ) * Super High density cell design for extremely low RDS(ON). * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：260.37 Kbytes 页数：2 Pages

CHENMKO

力勤