Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：139.59 Kbytes 页数：4 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

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N Channel MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 9.5 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

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