N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 40A, RDS(ON) = 19mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：380.53 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 400V, 5A, RDS(ON) = 1W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating.

文件：613.99 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 65A, RDS(ON) = 7.8mΩ(typ) @VGS = 10V. RDS(ON) = 10mΩ(typ) @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：98.83 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 57A, RDS(ON) = 9mΩ(typ) @VGS = 10V. RDS(ON) = 16mΩ(typ) @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：399.3 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 400V, 9A, RDS(ON) = 0.55W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：641.89 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 25V, 60A, RDS(ON) = 9mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 13mW @VGS = 4.5V. Lead free product is acquired.

文件：789.62 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 25V, 60A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：106.44 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 500V, 4.1A, RDS(ON) = 1.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant.

文件：364.89 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 500V, 4.5A, RDS(ON) = 1.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件：557.38 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 500V, 4.5A, RDS(ON) = 1.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：397.5 Kbytes 页数：4 Pages

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