Silicon N Channel MOS FET High Speed Power Switching

* Low on-resistance RDS(on)= 4 mΩ typ. * Low drive current * 4 V gate drive device can be driven from 5 V source

文件：87.06 Kbytes 页数：8 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：324.08 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET High Speed Power Switching

* Low on-resistance RDS(on)= 4 mΩ typ. * Low drive current * 4 V gate drive device can be driven from 5 V source

文件：87.06 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

* Low on-resistance RDS(on)=4mΩ typ. * Low drive current * 4V gate drive device can be driven from 5V source

文件：50.63 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

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