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2N7002AK

N-ChannelEnhancementMOSFET

HighSpeedSwitchingApplications ESDprotectedgate LowON-resistance RDS(on)=2.8Ω(typ.)(@VGS=10V) RDS(on)=3.1Ω(typ.)(@VGS=5V) RDS(on)=3.2Ω(typ.)(@VGS=4.5V)

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

2N7002AQ

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance

DIODESDiodes Incorporated

达尔科技

2N7002AX

N-CHANNELENHANCEMENTMODEMOSFET

Features •N-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •ESDProtectedupto1kV •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101Stand

DIODESDiodes Incorporated

达尔科技

2N7002B

SOT-23Plastic-EncapsulateMOSFETS

FEATURE *HighdensitycelldesignforlowRDS(ON) *Voltagecontrolledsmallsignalswitch *Ruggedandreliable *Highsaturationcurrentcapability

UMWUMW

友台友台半导体

2N7002B

N-CHannelEnhancementModeMOSFET

KODENSHIKodenshi Group

可天士可天士光电子集团

2N7002BK

60VN-ChannelEnhancementModeMOSFET

Description ●TrenchPowerMVMOSFETtechnology ●Voltagecontrolledsmallsignalswitch ●LowinputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage GeneralFeatures ●VDS60V ●ID300mA ●RDS(ON)(atVGS=10V)

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

2N7002BK

60V,350mAN-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ■Logic-levelcompatible ■Veryfastswitching ■TrenchMOSFETtechnology ■ESDprotecti

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

2N7002BK

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

2N7002BK

60VN-ChannelMosfet

Application Directlogic-levelinterface:TTL/CMOS Drivers:relays,solenoids,lamps,hammersdisplay, memories,transistors,etc. Batteryoperatedsystems Solid-staterelays

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

2N7002BK

60V,350mAN-channelTrenchMOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ESDpr

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2N7002BKM

60V,450mAN-channelTrenchMOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall SOT883(SC-101)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtec

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2N7002BKM

60V,450mAN-channelTrenchMOSFET

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

2N7002BKM

60V,singleN-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits Veryfastswitching TrenchMOSFETtechnology ESDprotect

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

2N7002BKMB

60V,singleN-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits Veryfastswitching TrenchMOSFETtechnology ESDprotect

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

2N7002BKMB

60V,singleN-channelTrenchMOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits Veryfastswitching TrenchMOSFETtechnology ESDprote

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2N7002BKS

60V,300mAdualN-channelTrenchMOSFET

1.1Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmall SOT363(SC-88)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnolog

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2N7002BKS

60V,300mAdualN-channelTrenchMOSFET

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

2N7002BKS

60V,300mAdualN-channelTrenchMOSFET

Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363(SC-88)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETechnology. Featuresandbenefits ●Logic-levelcompatible ●Veryfastswitching ●TrenchMOSFETtechnology ●ESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

2N7002BKT

60V,290mAN-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT416(SC-75)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits „Logic-levelcompatible „Veryfastswitching „TrenchMOSFETtechnology „E

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

2N7002BKT

60V,290mAN-channelTrenchMOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT416(SC-75) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ESDprote

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

供应商型号品牌批号封装库存备注价格
VISHAY
21+
SOT23
8889
原装现货假一赔十
询价
Vishay/Vishay Intertechnology,
21+
SOT23
8889
优势代理渠道,原装正品,可全系列订货开增值税票
询价
LRC
22+
SOT-23
6014
原装现货
询价
LRC
23+
SOT-23
6014
专注配单,只做原装进口现货
询价
LRC
23+
SOT-23
6014
专注配单,只做原装进口现货
询价
ON
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
ON/安森美
23+
na
30000
有挂就有货,只做原装免费送样,可BOM配单
询价
ON
10
优势货源原装正品
询价
23+
N/A
85600
正品授权货源可靠
询价
DIODES
2020+
SOT-23
87310
公司代理品牌,原装现货超低价清仓!
询价
更多2N7002(E)-T1供应商 更新时间2024-5-21 10:20:00