PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SB798 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits.

文件：221.65 Kbytes 页数：4 Pages

NEC

瑞萨

POWER TRANSISTOR

DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage: VCE(sat)

文件：118.37 Kbytes 页数：3 Pages

UTC

友顺

SILICON TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

文件：350.04 Kbytes 页数：6 Pages

RENESAS

瑞萨

PNP Silicon Epitaxial Transistor

■ Features ● Low Collector Saturation Voltage: VCE(sat)

文件：52.1 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon PNP transistor in a SOT-89 Plastic Package

Description Silicon PNP transistor in a SOT-89 Plastic Package. Features Low VCE(sat), excellent hFE linearity, complements the 2SD999. Applications Audio frequency power amplifier applications.

文件：1.34792 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

PNP-Silicon General use Transistors

PNP-Silicon General use Transistors 1W 、 1.0A、 25V Applications： Can be used for switching and amplifying in various electrical and electronic circuit.

文件：873.97 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

POWER TRANSISTOR

文件：180.76 Kbytes 页数：4 Pages

UTC

友顺

Bipolar Transistor

The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. • Low Collector Saturation Voltage: \n• Excellent DC Current Gain Linearity :   \n• hFE = 100 Typ. (VCE = -1.0V, IC = -1.0A);

UTC

友顺

Small Signal Bipolar Transistors

Support is limited to customers who have already adopted these products.

Renesas

瑞萨

双极晶体管

BlueRocket

蓝箭电子