首页 >2N7002B>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

2N7002B

Marking:7002;Package:SOT-23;SOT- 23 Plastic-Encapsulate MOSFETS

FEATURE *HighdensitycelldesignforlowRDS(ON) *Voltagecontrolledsmallsignalswitch *Ruggedandreliable *Highsaturationcurrentcapability

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

2N7002B

Marking:7002;Package:SOT-23;SOT- 23 Plastic-Encapsulate MOSFETS

FEATURE HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

2N7002B

N-CHannel Enhancement Mode MOSFET

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

2N7002BK

Marking:72KC;Package:SOT-23;60V N-Channel Enhancement Mode MOSFET

Description ●TrenchPowerMVMOSFETtechnology ●Voltagecontrolledsmallsignalswitch ●LowinputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage GeneralFeatures ●VDS60V ●ID300mA ●RDS(ON)(atVGS=10V)

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

2N7002BK

Marking:LN;Package:TO-236AB;60 V, 350 mA N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ESDpr

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2N7002BK

Marking:7200;Package:SOT23;60V N-Channel Mosfet

Application Directlogic-levelinterface:TTL/CMOS Drivers:relays,solenoids,lamps,hammersdisplay, memories,transistors,etc. Batteryoperatedsystems Solid-staterelays

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

2N7002BK

Marking:LN;Package:SOT23;60 V, 350 mA N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnology •ESD

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2N7002BK_V01

60 V, 350 mA N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnology •ESD

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2N7002BKM

Marking:Z8;Package:SC-101;60 V, 450 mA N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall SOT883(SC-101)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtec

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2N7002BKMB

Marking:0000;Package:SOT883B;60 V, single N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits Veryfastswitching TrenchMOSFETtechnology ESDprote

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    2N7002B

  • 功能描述:

    MOSFET Single N-Channel 60V 300mA

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
1844+
SOT-23
9852
只做原装正品假一赔十为客户做到零风险!!
询价
AUK
23+
SOT-23
39000
原装正品现货
询价
AUK
2022+
SOT-23
40000
原厂代理 终端免费提供样品
询价
AUK
2022+
SOT-23
30000
进口原装现货供应,原装 假一罚十
询价
友台
23+
SOT-23
11200
优势原装现货假一赔十
询价
24+
N/A
65000
一级代理-主营优势-实惠价格-不悔选择
询价
UMW
2226
con
3000
现货常备产品原装可到京北通宇商城查价格
询价
UMW
24+
con
35960
查现货到京北通宇商城
询价
Siliup(矽普)
23+
SOT-23
5700
三极管/MOS管/晶体管 > 场效应管(MOSFET)
询价
MCC/美微科
24+
SOT-23
360000
交期准时服务周到
询价
更多2N7002B供应商 更新时间2025-6-9 17:48:00