丝印：7002；Package：SOT-23；SOT- 23 Plastic-Encapsulate MOSFETS

FEATURE * High density cell design for low RDS(ON) * Voltage controlled small signal switch * Rugged and reliable * High saturation current capability

文件：886.78 Kbytes 页数：4 Pages

UMW

友台半导体

丝印：7002；Package：SOT-23；SOT- 23 Plastic-Encapsulate MOSFETS

FEATURE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability

文件：440.66 Kbytes 页数：4 Pages

EVVOSEMI

翊欧

N-CHannel Enhancement Mode MOSFET

文件：242.78 Kbytes 页数：6 Pages

KODENSHI

可天士

丝印：72KC；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage General Features ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V)

文件：7.23256 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：LN-；Package：SOT-23；60 V, 350 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ ESD protecti

文件：176.53 Kbytes 页数：16 Pages

恩XP

丝印：LN；Package：SOT23；60 V, 350 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

文件：286.97 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：LN；Package：TO-236AB；60 V, 350 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pr

文件：737.7 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：7200；Package：SOT23；60V N-Channel Mosfet

Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers display, memories, transistors, etc. Battery operated systems Solid-state relays

文件：1.01958 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

60 V, 350 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

文件：286.97 Kbytes 页数：15 Pages

NEXPERIA

安世

60 V, 350 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ ESD protecti

文件：176.53 Kbytes 页数：16 Pages

恩XP