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型号	下载订购	功能描述	制造商上传企业	LOGO
2N7002BKM	文件：667.35 Kbytes Page：15 Pages	丝印：Z8；Package：SOT-883；60 V, single N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFETtechnology ESD protect 文件：667.35 Kbytes 页数：15 Pages	恩XP	恩XP
2N7002BKM	文件：906 Kbytes Page：16 Pages	丝印：Z8；Package：SC-101；60 V, 450 mA N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tec 文件：906 Kbytes 页数：16 Pages	NEXPERIA 安世	NEXPERIA
2N7002BKMB	文件：1.4098 Mbytes Page：15 Pages	丝印：0000；Package：SOT883B；60 V, single N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD prote 文件：1.4098 Mbytes 页数：15 Pages	NEXPERIA 安世	NEXPERIA
2N7002BKMB	文件：667.35 Kbytes Page：15 Pages	60 V, single N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFETtechnology ESD protect 文件：667.35 Kbytes 页数：15 Pages	恩XP	恩XP
2N7002BKS	文件：298.18 Kbytes Page：15 Pages	丝印：ZT；Package：TSSOP6；60 V, 300 mA dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog 文件：298.18 Kbytes 页数：15 Pages	NEXPERIA 安世	NEXPERIA
2N7002BKS	文件：931.08 Kbytes Page：16 Pages	丝印：ZT；Package：SC-88；60 V, 300 mA dual N-channel Trench MOSFET 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolog 文件：931.08 Kbytes 页数：16 Pages	NEXPERIA 安世	NEXPERIA
2N7002BKS	文件：384.54 Kbytes Page：16 Pages	丝印：ZT*；Package：SOT-363；60 V, 300 mA dual N-channel Trench MOSFET General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET echnology. Features and benefits ● Logic-level compatible ● Very fast switching ● Trench MOSFET technology ● ESD p 文件：384.54 Kbytes 页数：16 Pages	恩XP	恩XP
2N7002BKS_V01	文件：298.18 Kbytes Page：15 Pages	60 V, 300 mA dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog 文件：298.18 Kbytes 页数：15 Pages	NEXPERIA 安世	NEXPERIA
2N7002BKT	文件：361.32 Kbytes Page：16 Pages	丝印：Z3；Package：SOT-416；60 V, 290 mA N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFETtechnology E 文件：361.32 Kbytes 页数：16 Pages	恩XP	恩XP
2N7002BKT	文件：460.37 Kbytes Page：17 Pages	丝印：Z3；Package：SOT416；60 V, 290 mA N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD prote 文件：460.37 Kbytes 页数：17 Pages	NEXPERIA 安世	NEXPERIA

技术参数

Type：
N
Vds(V)：
60
Vgs(V)：
20
ESD：
YES
Id_Max(A)：
0.3
Vth_Min(V)：
1
Vth_Typ(V)：
1.5
Vth_Max(V)：
2.5
Ron(mΩ)_Vgs=10V_Typ：
1700
Ron(mΩ)_Vgs=10V_Max：
3000
Ron(mΩ)_Vgs=4.5V_Typ：
1800
Ron(mΩ)_Vgs=4.5V_Max：
4000

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	2N7002B	AUK	2022+	SOT-23	40000	原厂代理终端免费提供样品	询价
深圳深宇韬电子科技有限公司	2N7002B	友台	23+	SOT-23	11200	优势原装现货假一赔十	询价
现代芯城（深圳）科技有限公司	2N7002B		24+	N/A	65000	一级代理-主营优势-实惠价格-不悔选择	询价
北京京北通宇电子元件有限公司	2N7002B	UMW	2226	con	3000	现货常备产品原装可到京北通宇商城查价格	询价
深圳中芯器材有限公司	2N7002B	Siliup(矽普)	23+	SOT-23	5700	三极管/MOS管/晶体管 > 场效应管(MOSFET)	询价
深圳市盈慧通电子有限公司	2N7002B	MCC/美微科	2511	SOT-23	360000	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
广东济德精密电子有限公司	2N7002B	友台UMW	25+	DIP	3000	国产替换现货降本	询价
深圳市粤科源兴科技有限公司	2N7002BKS,115	DISCRETE	3000	PH3	459000		询价
深圳市凌旭科技有限公司	2N7002BKV	恩XP	2016+	SOT566	3500	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市卓越微芯电子有限公司	2N7002BKT	恩XP	25+	SOT-416	117800	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多2N7002B供应商更新时间2025-12-12 14:02:00

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