丝印：0000；Package：SOT883B；60 V, single N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD prote

文件：1.4098 Mbytes 页数：15 Pages

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丝印：0000；Package：SOT883B；30 V, single N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Low threshold voltage • Trench MOSFET t

文件：259.43 Kbytes 页数：14 Pages

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安世安世半导体(中国)有限公司

丝印：0000；Package：SOT883B；30 V, single P-channel Trench MOSFET

1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFE

文件：1.65853 Mbytes 页数：15 Pages

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安世安世半导体(中国)有限公司

丝印：0000；Package：SOD882D；Ultra low capacitance unidirectional ESD protection diode

1.1 General description Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic packag

文件：755.57 Kbytes 页数：12 Pages

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丝印：0000；Package：DFN1006D-2；Ultra low capacitance unidirectional ESD protection diode

1. General description Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode, designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package

文件：230.48 Kbytes 页数：11 Pages

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丝印：0000；Package：DFN1006D-2；20 V, 1 A low VF MEGA Schottky barrier rectifier

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side p

文件：244.18 Kbytes 页数：12 Pages

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丝印：0000；Package：SOT883B；20 V, single N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFE

文件：1.55927 Mbytes 页数：15 Pages

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丝印：0000；Package：SOT883B；20 V, single P-channel Trench MOSFET

1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFE

文件：1.56355 Mbytes 页数：15 Pages

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丝印：00001101；Package：SOT883B；40 V, 100 mA PNP general-purpose transistors

Features and benefits * Leadless ultra small SMD plastic package * Power dissipation comparable to SOT23 * Low package height of 0.37 mm * AEC-Q101 qualified

文件：988.04 Kbytes 页数：12 Pages

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丝印：00001110；Package：SOT883B；40 V, 100 mA PNP general-purpose transistors

Features and benefits * Leadless ultra small SMD plastic package * Power dissipation comparable to SOT23 * Low package height of 0.37 mm * AEC-Q101 qualified

文件：988.04 Kbytes 页数：12 Pages

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