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Marking：00101000；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = open Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC143TMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■ | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：00101000；Package：DFN1006D-2；20 V, 0.5 A low VF Schottky barrier rectifier 1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aleadlessultrasmallSOD882D(DFN1006D-2)Surface-MountedDevice(SMD)plasticpackage withvisibleandsolderablesidepads. 2.Featuresandbenefits •Averagefo | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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