PESD5V0V2BMB-Q

Marking：0011；Package：DFN1006B-3；Very low capacitance bidirectional ESD protection diodes

1.Generaldescription TwobidirectionalElectroStaticDischarge(ESD)protectiondiodesdesignedtoprotecttwosignal linesfromdamagecausedbyESDandothertransients.ThedeviceishousedinaDFN1006B-3 (SOT883B)leadlessultrasmallSurface-MountedDevice(SMD)plasticpackage. 2.Fea

PMEG3005ELD

Marking：0011；Package：SOD882D；0.5 A low VF MEGA Schottky barrier rectifier

1.1Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaSOD882Dleadlessultra smallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolderableside pads. 1.2F

PMH550UNEA

Marking：0011；Package：SOT8001；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFET

BC807-40QA

Marking：001100；Package：DFN1010D-3；45 V, 500 mA PNP general-purpose transistors

Featuresandbenefits *General-purposetransistor *Twocurrentgainselections *Lowpackageheightof0.37mm *AEC-Q101qualified

BC847CQA

Marking：001101；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

Featuresandbenefits General-purposetransistors Threecurrentgainselections Lowpackageheightof0.37mm SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint AEC-Q101qualified

BC857AQA

Marking：001110；Package：DFN1010D-3；45 V, 100 mA PNP general-purpose transistors

Featuresandbenefits General-purposetransistors Threecurrentgainselections Lowpackageheightof0.37mm SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint AEC-Q101qualified

BC857BQA

Marking：001111；Package：SOT1215；45 V, 100 mA PNP general-purpose transistors

Featuresandbenefits General-purposetransistors Threecurrentgainselections Lowpackageheightof0.37mm SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint AEC-Q101qualified

PDTC114YMB

Marking：00110000；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 10 k廓, R2 = 47 k廓

Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA114YMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

PDTC123EMB

Marking：00110011；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA123EMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

PDTC124EMB

Marking：00110111；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 22 k廓, R2 = 22 k廓

Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA124EMB Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■R