丝印：0011；Package：SOT8001；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET

文件：278.45 Kbytes 页数：15 Pages

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30 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technol

文件：272.59 Kbytes 页数：14 Pages

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20 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET te

文件：274.47 Kbytes 页数：14 Pages

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安世

30 V, N-channel Trench MOSFET

文件：713.83 Kbytes 页数：15 Pages

NEXPERIA

安世