BC857AQA

Marking：001110；Package：DFN1010D-3；45 V, 100 mA PNP general-purpose transistors

Featuresandbenefits General-purposetransistors Threecurrentgainselections Lowpackageheightof0.37mm SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint AEC-Q101qualified

BC857AQA

Marking：001110；Package：DFN1010D-3；45 V, 100 mA PNP general-purpose transistors

PDTC124XMB

Marking：00111001；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 22 k廓, R2 = 47 k廓

Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA124XMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

PDTC143EMB

Marking：00111010；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 4.7 k廓

Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallSOT883BSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA143EMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■Reducespick

PDTC143TMB

Marking：00111011；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = open

Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA143TMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

PDTC124TMB

Marking：00111000；Package：SOT883B；NPN resistor-equipped transistor; R1 = 22 k廓, R2 = open