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BC857AQA

Marking:001110;Package:DFN1010D-3;45 V, 100 mA PNP general-purpose transistors

Featuresandbenefits General-purposetransistors Threecurrentgainselections Lowpackageheightof0.37mm SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC857AQA

Marking:001110;Package:DFN1010D-3;45 V, 100 mA PNP general-purpose transistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTC124XMB

Marking:00111001;Package:DFN1006B-3;NPN resistor-equipped transistor; R1 = 22 k廓, R2 = 47 k廓

Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA124XMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTC143EMB

Marking:00111010;Package:DFN1006B-3;NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 4.7 k廓

Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallSOT883BSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA143EMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■Reducespick

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTC143TMB

Marking:00111011;Package:DFN1006B-3;NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = open

Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA143TMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDTC124TMB

Marking:00111000;Package:SOT883B;NPN resistor-equipped transistor; R1 = 22 k廓, R2 = open

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

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