NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143EMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

Nexperia

安世

丝印：00111010；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 4.7 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick

文件：960.81 Kbytes 页数：12 Pages

NEXPERIA

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Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 250MW 3DFN

Nexperia USA Inc.

50 V, 100 mA NPN resistor-equipped transistors

文件：2.78525 Mbytes 页数：21 Pages

NEXPERIA

安世

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  AEC-Q101 qualified  Suitable for Automatic Optical Inspection (AOI) of solder joint

文件：2.78427 Mbytes 页数：21 Pages

NEXPERIA

安世

50 V, 100 mA PNP resistor-equipped transistors

Features and benefits  100 mA output current capability  built-in bias resistors  simplifies circuit design  reduces component count  reduced pick and place costs  low package height of 0.37 mm  AEC-Q101 qualified  suitable for Automatic Optical Inspection (AOI) of solder joint

文件：2.80866 Mbytes 页数：21 Pages

NEXPERIA

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